HTX4-600S semihow rev.1.0 jan 2006 ? repetitive peak off- state voltage: 600v ? r.m.s on-state current (i t(rms) =4a) ? high commutation dv/dt ? sensitive gate triggering 4 mode features HTX4-600S non insulated type sensitive gate triac the devices is sensitive gate triac suitable for direct coupling to ttl,htl,cmos and application such as various logic functions, low power ac switching applications, such as fan speed, small light controllers and home appliance equipment. general description 1.t1 2. t2 3. gate v drm = 600 v i t(rms) = 4.0a i gt(max) = 10ma 1.t1 symbol 2.t2 3.gate absolute maximum ratings ( t a =25) s ymbol parame te r val ue uni ts v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current (ta = 95 )4a v gm peak gate voltage 7 v i gm peak gate current 1 a p g(av) average gate power dissipation 0.1 w p gm peak gate power dissipation 1.5 w t stg storage temperature range -40 to +125 t j operating temperature -40 to +125 i tsm 30/33 a surge on-state current (one cycle, 50/60hz, peak, non repetitive) htp4-600s htc4-600s htm4-600s
HTX4-600S semihow rev.1.0 jan 2006 electrical characteristics ( t a =25 ) symbol parameter min typ max units 1+, 1-, 3- 5 ma 3+ 10 ma 1+, 1-, 3- 1.4 v 3+ 1.8 v v gd non trigger gate volt age 0.2 v 5v / u s 11 v/us i h holding current 10 ma i drm repetitive peak off- state current 1.0 ma v tm peak on-state voltage 1.6 v i gt v d =6v, r l =10 ? gate trigger current v d =6v, r l =10 ? gate trigger voltage test conditions tj=125 , v d =1/2v drm tj=125 , vd=2/ 3vdrm (di/dt)c=-0.2a/ms (to-126/ml) crit ical rat e of rise of off-state voltage at communication it=6a, inst, measurement v gt tj=125 , vd=2/ 3vdrm (di/dt)c=-0.5a/ms (to-220) v d =v drm , single phase, half wave, t j =125 (dv/dt)c thermal characteristics s ymbol parameter test conditions case min typ max units to-220 3 / w to-126/m l 3.5 / w junction to case thermal resistance r th(j-c)
HTX4-600S semihow rev.1.0 jan 2006 performance curves on-state current (a) fig 1. gate characteristics gate current (ma) gate voltage (v) 10 1 10 0 10 -1 10 0 10 1 10 2 10 3 fig 2.on-state voltage on-state voltage (v) 10 -1 10 0 10 1 10 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 rms on-state current (a) fig 3. gate trigger voltage vs. junction temperature junction temperature ( ) 10 3 10 2 10 1 -50 0 50 100 150 v + gt1 v - gt1 v - gt3 v gt (t ) v gt (25 ) x 100 (%) fig 4. on state current vs. maximum power dissipation power dissipation (w) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 fig 5. on state current vs. allowable case temperature rms on-state current (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 130 125 120 115 110 105 100 95 5.0 0.0 allowable case temp ( ) time (cycles) 10 0 10 1 10 2 35 30 25 20 15 10 5 0 surge on-state current (a) fig 6. surge on-state current rating (non-repetitive)
HTX4-600S semihow rev.1.0 jan 2006 fig 7. gate trigger current vs. junction temperature junction temperature ( ) 10 3 10 2 10 1 -50 0 50 100 150 i + gt1 i - gt1 i - gt3 v gt (t ) v gt (25 ) x 100 (%) time (sec) 10 -1 10 0 10 2 10 1 transient thermal impedance ( /w) fig8. transient thermal impedance 10 -2 10 1 fig 7. gate trigger characteristics test circuit rg v 10? a 6v rg v 10? a 6v rg v 10? a 6v rg v 10? a 6v test procedure i test procedure ii test procedure iii test procedure iv
HTX4-600S semihow rev.1.0 jan 2006 package dimension htp4-600s (to-220)
HTX4-600S semihow rev.1.0 jan 2006 dimensions in millimeters dim millimeters a8 . 5 m a x b 12.0max c 13.0min d 3.80.2 g 0.780.08 g1 1.2 h2 . 8 m a x h3 1.27 k 2.50.2 l2 . 3 m a x 3.200.2 package dimension htc4-600s (to-126)
HTX4-600S semihow rev.1.0 jan 2006 corresponding symbol measurement a(mm) 7.99 0.25 b(mm) 11.12 0.25 c(mm) 14.5 0.5 e(mm) 3.625 0.125 f(mm) 1.4 0.12 g(mm) 0.76 0.08 g1(mm) 1.3 0.12 h(mm) 3.57 0.13 h3(mm) 2.01 0.13 i(mm) 2.99 0.38 k(mm) 1.0 0.12 l(mm) 2.3max 1(mm) 3.0 0.12 package dimension htm4-600s (to-126ml)
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